| PART |
Description |
Maker |
| ECE-V1HA101UP EEV-TG2A101M ERJ-8GEYJ100V GRM32NR72 |
120W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
| ATC100A0R7BT ATC100A0R2BT ATC100A120JT ATC100A220J |
280W GaN WIDEBAND PULSED POWER
|
RF Micro Devices
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
NXP Semiconductors
|
| CGH40006P-AMP |
6 W, RF Power GaN HEMT
|
Cree, Inc
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| DDW-JJD-N1 DDB-JJS-K1 DDB-JJS-K2 DDB-JJS-KL2-1-I1 |
LED GaN SINGLE COLOR LED, BLUE
LED GaN 氮化镓发光二极管
LED GaN SINGLE COLOR LED, WHITE
|
DOMINANT Opto Technologies Sdn. Bhd.
DOMINANT Opto Technologies Sdn Bhd.
DOMINANT[DOMINANT Semiconductors]
|
| CLF1G0060S-10 CLF1G0060-10 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CG2H30070F |
70 W, 0.5?.0 GHz, 28 V, RF Power GaN HEMT
|
Cree, Inc
|
